Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry; Kornelius Tetzner; Yen-Hung Lin; Sungho Nam; Christopher Pearson; Chris Groves; Michael C Petty; Thomas D Anthopoulos; Donal D C Bradley

doi:10.1021/acsami.8b06031

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

ACS Appl Mater Interfaces. 2018 Jun 6;10(22):18445-18449. doi: 10.1021/acsami.8b06031. Epub 2018 May 21.

Authors

Affiliations

¹ Department of Engineering , Durham University , Durham DH1 3LE , United Kingdom.
² Blackett Laboratory, Department of Physics and Centre for Plastic Electronics , Imperial College London , London SW7 2AZ , United Kingdom.
³ Department of Physics , University of Oxford , Oxford OX1 3PU , United Kingdom.
⁴ Physical Science and Engineering Division , King Abdullah University of Science and Technology , Thuwal 23955 , Saudi Arabia.
⁵ Department of Engineering Science , University of Oxford , Oxford OX1 3PJ , United Kingdom.

PMID: 29767502
DOI: 10.1021/acsami.8b06031

Abstract

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO _x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In₂O₃/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm²/(V s)) with appreciable current on/off ratios (≈10³) and an external quantum efficiency of 2 × 10^-2% at 700 cd/m². The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Keywords: hybrid transistors; light-emitting transistors; low-voltage; metal oxide high-k dielectric; solution-processed organic semiconductors.