Author Correction: Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co₂Fe₆B₂ Free Layer using a Single SyAF [Co/Pt]_n Layer

Sci Rep. 2018 Apr 27;8(1):6902. doi: 10.1038/s41598-018-25255-5.

Authors

Jin-Young Choi¹, Dong-Gi Lee², Jong-Ung Baek³, Jea-Gun Park^{2

3}

Affiliations

¹ MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, Republic of Korea. parkjgl@hanyang.ac.kr.
² MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, Republic of Korea.
³ MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea.

Abstract

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.

Publication types

Published Erratum