Laser interference ablation in silicon using femto-, pico-, and nanosecond pulses was investigated. The experimental and computational results provide information about nanoscale thermal diffusion during the ultra-short laser-matter interaction. The temperature modulation depth was introduced as a parameter for quality assessment of laser interference ablation. Based on the experiments and calculations, a new semi-empirical formula which combines the interference period with the laser pulse duration, the thermal modulation depth and the thermal diffusivity of the material was derived. This equation is in excellent agreement with the experimental and modelling results of laser interference ablation. This new formula can be used for selecting the appropriate pulse duration for periodical structuring with the required resolution and quality.