Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy

Thi Kim Oanh Vu; Kyoung Su Lee; Sang Jun Lee; Eun Kyu Kim

doi:10.1166/jnn.2018.15625

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy

J Nanosci Nanotechnol. 2018 Sep 1;18(9):6239-6243. doi: 10.1166/jnn.2018.15625.

Authors

Thi Kim Oanh Vu¹, Kyoung Su Lee¹, Sang Jun Lee², Eun Kyu Kim¹

Affiliations

¹ Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Korea.
² Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 34113, Korea.

PMID: 29677773
DOI: 10.1166/jnn.2018.15625

Abstract

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.