In this study, the improvement of the electrical properties of carbon nanowalls (CNWs) by the deposition of nonmetallic thin films such as carbon (C), silicon (Si), and silicon carbide (SiC) was investigated. The CNWs were synthesized on a Si wafer substrate using microwave-plasma-enhanced chemical vapor deposition (PECVD). The thin films were deposited through RF magnetron sputtering with a 4-inch target (C, Si, and Sic) on the grown CNWs. The surficial and cross-sectional conditions were examined using the images obtained from a field emission scanning electron microscope (FESEM). The structural characteristics were analyzed through Raman analysis. The analysis of the electric characteristics confirmed that the resistivity decreased for the nonmetallic-thin-film-coated samples, and that the mobility increased in the order of the as-deposited sample and the C-, SiC-, and Si-thin film-deposited samples. It was also confirmed that the deposition of the SiC thin films resulted in the lowest resistivity at 13.6 × 10-3 Ωcm, and that the deposition of the Si thin films showed the highest mobility at 304 cm2/VS.