Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films

Miika Mattinen; Peter J King; Leonid Khriachtchev; Kristoffer Meinander; James T Gibbon; Vin R Dhanak; Jyrki Räisänen; Mikko Ritala; Markku Leskelä

doi:10.1002/smll.201800547

Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS₂ Films

Small. 2018 May;14(21):e1800547. doi: 10.1002/smll.201800547. Epub 2018 Apr 19.

Authors

Miika Mattinen¹, Peter J King¹, Leonid Khriachtchev¹, Kristoffer Meinander², James T Gibbon³, Vin R Dhanak³, Jyrki Räisänen², Mikko Ritala¹, Markku Leskelä¹

Affiliations

¹ Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014, Finland.
² Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Finland.
³ Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool, L69 7ZF, UK.

PMID: 29673074
DOI: 10.1002/smll.201800547

Abstract

Semiconducting 2D materials, such as SnS₂ , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS₂ films has remained a great challenge. Herein, continuous wafer-scale 2D SnS₂ films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS₂ films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS₂ films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

Keywords: 2d materials; SnS2; atomic layer deposition; semiconductors; thin films.