Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure

Xiang Hou; Heng Zhang; Chunsen Liu; Shijin Ding; Wenzhong Bao; David Wei Zhang; Peng Zhou

doi:10.1002/smll.201800319

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe₂ Structure

Small. 2018 May;14(20):e1800319. doi: 10.1002/smll.201800319. Epub 2018 Apr 17.

Authors

Xiang Hou¹, Heng Zhang¹, Chunsen Liu¹, Shijin Ding¹, Wenzhong Bao¹, David Wei Zhang¹, Peng Zhou¹

Affiliation

¹ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

PMID: 29665261
DOI: 10.1002/smll.201800319

Abstract

Recently, layered ultrathin 2D semiconductors, such as MoS₂ and WSe₂ are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge-trap materials. Here, a charge-trap memory device based on a hybrid 0D CdSe QD-2D WSe₂ structure is demonstrated. Specifically, ultrathin WSe₂ is employed as the channel of the memory, and the QDs serve as the charge-trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 10⁴ ), four-level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al₂ O₃ . The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge-trap memory devices.

Keywords: 2D semiconductors; charge-trap memory; memory window; quantum dots.