Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe

Abstract

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi₂) sandwiched between two Bi₂Se₃ quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ_lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi₂Se₃ (κ_lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi₂) _m(Bi₂Se₃) _n. Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ_lat. These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ_lat. Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.