The problem of light source always prevents silicon-based photonics from achieving a final integration. Although some optical pump lasers have been reported in recent years, an electrical pumping laser is considered as the ultimate solution. To fabricate a Si-based laser, there are some crucial obstacles that need to be solved such as difficulties in material epitaxy, light absorption by metal electrodes, and compatibility with the existing complementary metal-oxide-semiconductor transistor process. Here, a multilayer graphene and GeSn/Ge quantum well (QW) heterostructure is designed and fabricated as a Si-based light source. Specially designed Ge0.9 Sn0.1 /Ge QWs are used as active layer, which achieves a photoluminescence (PL) peak at 2050 nm. Graphene, which has a high transmittance for all bands of light, lessens the burden of growing thick cladding layer and perfectly breaks the deadlock of light disappearance in metal contacts. The electroluminescence (EL) spectrum of the device is achieved at a peak of 2100 nm under an injection current density of 100 A cm-2 . Both the PL and EL measurements show the heterostructure has good performance as a short-wave infrared (SWIR) light source. Therefore, the results provides a good alternative for the light source in silicon-based photonics.
Keywords: GeSn quantum wells; graphene; heterostructures; light sources; short-wave infrared light.
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