Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Shiben Hu; Honglong Ning; Kuankuan Lu; Zhiqiang Fang; Yuzhi Li; Rihui Yao; Miao Xu; Lei Wang; Junbiao Peng; Xubing Lu

doi:10.3390/nano8040197

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Nanomaterials (Basel). 2018 Mar 27;8(4):197. doi: 10.3390/nano8040197.

Authors

Shiben Hu¹, Honglong Ning², Kuankuan Lu³, Zhiqiang Fang⁴, Yuzhi Li⁵, Rihui Yao⁶, Miao Xu⁷, Lei Wang⁸, Junbiao Peng⁹, Xubing Lu¹⁰

Affiliations

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. hushiben@foxmail.com.
² Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. ninghl@scut.edu.cn.
³ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. kk-lu@foxmail.com.
⁴ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. fangzq1230@126.com.
⁵ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. liyuzhi1991@foxmail.com.
⁶ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. yaorihui@scut.edu.cn.
⁷ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. xumiao4049@126.com.
⁸ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. mslwang@scut.edu.cn.
⁹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. psjbpeng@scut.edu.cn.
¹⁰ Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China. luxubing@m.scnu.edu.cn.

Abstract

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Keywords: IGZO; Schottky contact; copper; indium; thin film transistors.