Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe5

Wei Wang; Xiaoqian Zhang; Huanfeng Xu; Yafei Zhao; Wenqin Zou; Liang He; Yongbing Xu

doi:10.1038/s41598-018-23011-3

Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe₅

Sci Rep. 2018 Mar 23;8(1):5125. doi: 10.1038/s41598-018-23011-3.

Authors

Wei Wang¹, Xiaoqian Zhang¹, Huanfeng Xu¹, Yafei Zhao¹, Wenqin Zou¹, Liang He², Yongbing Xu^{1

3}

Affiliations

¹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
² National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. heliang@nju.edu.cn.
³ Department of Electronics, York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering, the University of York, York, YO10 3DD, United Kingdom.

Abstract

ZrTe₅ is an important semiconductor thermoelectric material and a candidate topological insulator. Here we report the observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistance in bulk ZrTe₅ crystal, with a mobility of 41,000 cm²V^-1s^-1. We have found that the quantum oscillations does not originate from the surface states, but from the bulk states. Each single layer ZrTe₅ acted like an independent 2D electron system in the quantum Hall regime having the same carrier density and mobilities, while the bulk of the sample exhibits a multilayered quantum Hall effect.