In conventional emitting devices, the mobility of electron is much higher than that of hole, which increases the non-recombination rate. To generate slow electrons, we demonstrate an electron retarding n-electrode (ERN) on the n-GaN layer of InGaN blue light emitting diode (LED), making more efficient radiation emission. Transparent conductive oxides are estimated to be more suitable for ERN materials. However, for ERN materials used in InGaN LEDs, three requirements should be satisfied, i.e., Ohmic contact to n-GaN, dilute magnetic doping, and good electrical conductivity. The pulsed-laser deposited cobalt-doped ZnO film prepared at 400 °C was chosen as the ERN. The electron retarding of 120-nm-thick ERN/n-GaN reached 19.9% compared to the n-GaN. The output powers (@350 mA) of LEDs with and without the ERN were 246.7 and 212.9 mW, while their wall-plug efficiencies were 18.2% and 15.1%, respectively. Moreover, owing to the efficient filling of electrons in the quantum wells by inserting the ERN, the bandgap of quantum wells was enlarged, inducing the blue-shift in the emission wavelength of LED. The slow electron generated from the ERN technique paves the way to solve the problem of large difference between electron and hole velocities and improve the optoelectronic performance of emitting devices.