Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Bin Peng; Wei Zheng; Jiantao Qin; Wanli Zhang

doi:10.3390/ma11030430

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Materials (Basel). 2018 Mar 15;11(3):430. doi: 10.3390/ma11030430.

Authors

Bin Peng¹, Wei Zheng², Jiantao Qin³, Wanli Zhang⁴

Affiliations

¹ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. bpeng@uestc.edu.cn.
² State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. 201522034014@std.uestc.edu.cn.
³ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. 201521034028@std.uestc.edu.cn.
⁴ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. wlzhang@uestc.edu.cn.

Abstract

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS₂, MoSe₂, and MoTe₂ may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay. Our work points out the direction of further device optimization for experiments.

Keywords: 2-D materials; junctionless FETs; monolayer transition metal dichalcogenide FETs.