Organometal halide perovskites (OHPs) have become the most promising optoelectronic material in the past few years with a myriad of applications in the photovoltaic, light-emitting, and laser fields. However, for light-emitting applications, the low photoluminescence quantum yield (PLQY) of OHP film is critical to hinder the efficiency improvement of OHP-film-based light-emitting diodes (PeLEDs). Herein, we study the effects of rubidium incorporation on the crystal growth, structure, and photoelectric and optical properties of formamidinium-lead-bromide-based (FAPbBr3-based) perovskite films and light-emission performance of PeLEDs. It is found that rubidium incorporation can significantly enhance the PLQY of FAPbBr3 film by suppressing the trap density and thus improve the withstand voltage as well as the performance of PeLEDs. When FAPbBr3 film with optimal Rb doping ratio is employed as the light emitter of PeLEDs, the maximum luminance and current efficiency is enhanced by ∼10-fold and ∼5-fold to 66 353 cd/m2 and 24.22 cd/A compared to the controlled device, respectively, the record performance based on FAPbBr3 PeLEDs so far. The enhanced performance can be chiefly attributed to the increase of PLQY and decrease of trap defect density of perovskite film with rubidium incorporation. Our research is expected to stimulate the development of OHPs for the next-generation lighting and display fields.
Keywords: doping engineering; formamidinium; light-emitting diodes; perovskite; rubidium.