Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition

Chien-Hung Wu; Kow-Ming Chang; Yi-Ming Chen; Bo-Wen Huang; Yu-Xin Zhang; Shui-Jinn Wang; Jui-Mei Hsu

doi:10.1166/jnn.2018.14977

Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition

J Nanosci Nanotechnol. 2018 Mar 1;18(3):2054-2057. doi: 10.1166/jnn.2018.14977.

Authors

Chien-Hung Wu¹, Kow-Ming Chang², Yi-Ming Chen², Bo-Wen Huang², Yu-Xin Zhang², Shui-Jinn Wang³, Jui-Mei Hsu⁴

Affiliations

¹ Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 300, R.O.C.
² Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
³ Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, 701, R.O.C.
⁴ Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, 310, R.O.C.

PMID: 29448711
DOI: 10.1166/jnn.2018.14977

Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 °C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13 × 108, saturation mobility of 10 cm2/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.