Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique

Chien-Hung Wu; Kow-Ming Chang; Yi-Ming Chen; Bo-Wen Huang; Yu-Xin Zhang; Shui-Jinn Wang

doi:10.1166/jnn.2018.14976

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique

J Nanosci Nanotechnol. 2018 Mar 1;18(3):1917-1921. doi: 10.1166/jnn.2018.14976.

Authors

Chien-Hung Wu¹, Kow-Ming Chang², Yi-Ming Chen², Bo-Wen Huang², Yu-Xin Zhang², Shui-Jinn Wang³

Affiliations

¹ Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 300, R.O.C.
² Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
³ Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, 701, R.O.C.

PMID: 29448683
DOI: 10.1166/jnn.2018.14976

Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.