Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure

Sheng-Po Chang; Deng Shan

doi:10.1166/jnn.2018.14344

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure

J Nanosci Nanotechnol. 2018 Apr 1;18(4):2493-2497. doi: 10.1166/jnn.2018.14344.

Authors

Sheng-Po Chang¹, Deng Shan¹

Affiliation

¹ Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center National Cheng Kung University, Tainan 70101, Taiwan.

PMID: 29442918
DOI: 10.1166/jnn.2018.14344

Abstract

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.