A crystalline silicon (c-Si) local-back-contact (LBC) solar cell for which a laser-condition-optimized surface-recombination velocity (SRV), a contact resistance (Rc), and local back surface fields (LBSFs) were utilized is reported. The effect of the laser condition on the rear-side electrical properties of the laser-fired LBC solar cell was studied. The Nd:YAG-laser (1064-nm wavelength) power and frequency were varied to obtain LBSF values with a lower contact resistance. A 10-kHz laser power of 44 mW resulted in an Rc of 0.125 ohms with an LBSF thickness of 2.09 μm and a higher open-circuit voltage (VOC) of 642 mV.