Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

Dongzhi Fu; Xingchen Pan; Zhanbin Bai; Fucong Fei; Gilberto A Umana-Membreno; Honglian Song; Xuelin Wang; Baigeng Wang; Fengqi Song

doi:10.1088/1361-6528/aaa811

Tuning the electrical transport of type II Weyl semimetal WTe₂ nanodevices by Mo doping

Nanotechnology. 2018 Apr 3;29(13):135705. doi: 10.1088/1361-6528/aaa811.

Authors

Dongzhi Fu¹, Xingchen Pan, Zhanbin Bai, Fucong Fei, Gilberto A Umana-Membreno, Honglian Song, Xuelin Wang, Baigeng Wang, Fengqi Song

Affiliation

¹ National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing, 210093, People's Republic of China.

PMID: 29432212
DOI: 10.1088/1361-6528/aaa811

Abstract

We fabricated nanodevices from Mo_xW_1-xTe₂ (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.