Reconfiguring crystal and electronic structures of MoS2 by substitutional doping

Joonki Suh; Teck Leong Tan; Weijie Zhao; Joonsuk Park; Der-Yuh Lin; Tae-Eon Park; Jonghwan Kim; Chenhao Jin; Nihit Saigal; Sandip Ghosh; Zicong Marvin Wong; Yabin Chen; Feng Wang; Wladyslaw Walukiewicz; Goki Eda; Junqiao Wu

doi:10.1038/s41467-017-02631-9

Reconfiguring crystal and electronic structures of MoS₂ by substitutional doping

Nat Commun. 2018 Jan 15;9(1):199. doi: 10.1038/s41467-017-02631-9.

Authors

Joonki Suh^{1

2}, Teck Leong Tan³, Weijie Zhao⁴, Joonsuk Park⁵, Der-Yuh Lin⁶, Tae-Eon Park⁷, Jonghwan Kim^{8

9}, Chenhao Jin⁸, Nihit Saigal¹⁰, Sandip Ghosh¹⁰, Zicong Marvin Wong^{3

11}, Yabin Chen¹², Feng Wang^{8

13}, Wladyslaw Walukiewicz^{12

13}, Goki Eda⁴, Junqiao Wu^{14

15}

Affiliations

¹ Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. joonki@uchicago.edu.
² Department of Chemistry, University of Chicago, Chicago, IL, 60637, USA. joonki@uchicago.edu.
³ Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore, 138632, Singapore.
⁴ Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.
⁵ Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
⁶ Department of Electronics Engineering, National Changhua University of Education, Changhua, 50007, Taiwan.
⁷ Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea.
⁸ Department of Physics, University of California, Berkeley, CA, 94720, USA.
⁹ Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea.
¹⁰ Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, 400005, India.
¹¹ Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
¹² Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
¹³ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
¹⁴ Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. wuj@berkeley.edu.
¹⁵ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. wuj@berkeley.edu.

Abstract

Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS₂ crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS₂ at the Γ point pushed upward by hybridization with the Nb states. When thinned down to monolayers, in stark contrast, such significant nonlinear effect vanishes, instead resulting in strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't