Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry application

Roumen Zlatev; Margarita Stoytcheva; Benjamin Valdez

doi:10.1016/j.talanta.2017.11.059

Rapid reagent-less on-line H₂O₂ quantification in alkaline semiconductor etching solution, Part 2: Nephelometry application

Talanta. 2018 Mar 1:179:594-600. doi: 10.1016/j.talanta.2017.11.059. Epub 2017 Nov 28.

Authors

Roumen Zlatev¹, Margarita Stoytcheva², Benjamin Valdez²

Affiliations

¹ Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. B. Juárez s/n, 21280 Mexicali, B.C., México. Electronic address: roumen@uabc.edu.mx.
² Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. B. Juárez s/n, 21280 Mexicali, B.C., México.

PMID: 29310281
DOI: 10.1016/j.talanta.2017.11.059

Abstract

A simple and rapid reagent less nephelometric method for on-line H₂O₂ quantification in semiconductors etching solutions was developed, optimized, characterized and validated. The intensity of the light scattered by the oxygen gas suspension resulted from H₂O₂ catalytic decomposition by immobilized MnO₂ was registered as analytical response. The influences of the light wave length, the agitation rate, the temperature and the catalyst surface area on the response amplitude were studied and optimization was done. The achieved linear concentration range from 10 to 150mmolL^-1 at 0.9835 calibration curve correlation coefficient, precision from 3.65% to 0.95% and response time from 35 to 20s respectively, at sensitivity of 8.01µAmmol^-1 L and LOD of 2.9mmolL ^-1 completely satisfy the semiconductor industry requirements.

Keywords: H(2)O(2) quantification; Nephelometry; Semiconductors etching solutions.