Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

Minhao Zhang; Huaiqiang Wang; Kejun Mu; Pengdong Wang; Wei Niu; Shuai Zhang; Guiling Xiao; Yequan Chen; Tong Tong; Dongzhi Fu; Xuefeng Wang; Haijun Zhang; Fengqi Song; Feng Miao; Zhe Sun; Zhengcai Xia; Xinran Wang; Yongbing Xu; Baigeng Wang; Dingyu Xing; Rong Zhang

doi:10.1021/acsnano.7b08054

Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi_1-xIn_x)₂Se₃ Nanodevices

ACS Nano. 2018 Feb 27;12(2):1537-1543. doi: 10.1021/acsnano.7b08054. Epub 2018 Jan 8.

Authors

Minhao Zhang¹, Huaiqiang Wang², Kejun Mu³, Pengdong Wang³, Wei Niu¹, Shuai Zhang², Guiling Xiao⁴, Yequan Chen¹, Tong Tong¹, Dongzhi Fu², Xuefeng Wang^{1

5}, Haijun Zhang^{2

5}, Fengqi Song^{2

5}, Feng Miao^{2

5}, Zhe Sun³, Zhengcai Xia⁴, Xinran Wang^{1

5}, Yongbing Xu^{1

5}, Baigeng Wang^{2

5}, Dingyu Xing^{2

5}, Rong Zhang^{1

5}

Affiliations

¹ National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, China.
² National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
³ National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei 230029, China.
⁴ Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology , Wuhan 430074, China.
⁵ Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.

PMID: 29294273
DOI: 10.1021/acsnano.7b08054

Abstract

We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi_1-xIn_x)₂Se₃ nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.

Keywords: intersurface coupling; topological critical point; topological insulators; topological phase transition; triaxial vector magnetoresistance.

Publication types

Research Support, Non-U.S. Gov't