Perovskite Light-Emitting Diodes via Laser Crystallization: Systematic Investigation on Grain Size Effects for Device Performance

Sung Jin Kim; Jinwoo Byun; Taewoo Jeon; Hyeong Min Jin; Hye Rim Hong; Sang Ouk Kim

doi:10.1021/acsami.7b15470

Perovskite Light-Emitting Diodes via Laser Crystallization: Systematic Investigation on Grain Size Effects for Device Performance

ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2490-2495. doi: 10.1021/acsami.7b15470. Epub 2018 Jan 9.

Authors

Sung Jin Kim¹, Jinwoo Byun¹, Taewoo Jeon¹, Hyeong Min Jin¹, Hye Rim Hong¹, Sang Ouk Kim¹

Affiliation

¹ National Creative Research Initiative Center for Multi-Dimensional Directed Nanoscale Assembly, Department of Materials Science & Engineering, KAIST , Daejeon 34141, Republic of Korea.

PMID: 29285922
DOI: 10.1021/acsami.7b15470

Abstract

Owing to unique potential for high color purity luminance based on low-cost solution processes, organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) are attracting a great deal of research attention. For high performance PeLEDs, optimum control of the perovskite film morphology is a critical parameter. Here, we introduce a reliable and well-controllable PeLED crystallization process based on beam-damage-free near-infrared laser (λ = 808 nm) irradiation. Morphology of the CH₃NH₃PbBr₃ films can be precisely controlled by laser irradiation condition parameters: power density and beam scan rate. We systematically investigate the perovskite film morphology and device performance of the PeLEDs under different processing conditions. In the optimum power density and high beam scan rate (30 W cm^-2, 0.1 mm s^-1), a dense and smooth perovskite film is attained with a small crystal grain size. The critical relationship between the crystal grain size and LED efficiency is established while attaining the device performance of 0.95 cd A^-1 efficiency and 1784 cd m^-2.

Keywords: PeLEDs; crystallization; laser; morphology control; perovskite.