Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

Kazuyoshi Kobashi; Ryoma Hayakawa; Toyohiro Chikyow; Yutaka Wakayama

doi:10.1021/acsami.7b14652

Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2762-2767. doi: 10.1021/acsami.7b14652. Epub 2018 Jan 8.

Authors

Kazuyoshi Kobashi^{1

2}, Ryoma Hayakawa¹, Toyohiro Chikyow¹, Yutaka Wakayama^{1

2}

Affiliations

¹ International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan.
² Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University , 1-1 Namiki, Tsukuba 305-0044, Japan.

PMID: 29277988
DOI: 10.1021/acsami.7b14652

Abstract

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (V_on) and offset (V_off) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.

Keywords: antiambipolar transistor; carrier injection; high-k dielectric; negative differential resistance; organic field-effect transistor; pn heterojunction.