It is essential to minimize the interfacial trap states and improve the carrier collection for high efficiency perovskite solar cells (PSCs). Herein, we present a facile method to construct a p-type graded heterojunction (GHJ) in normal PSCs by deploying a gradient distribution of hole-transporting materials (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA, in this case) in the shallow perovskite layer. The formation of the GHJ structure facilitates charge transfer and collection, and passivates interfacial trap states, thus delivering a power conversion efficiency (PCE) of 20.05 % along with steady output efficiency of 19.3 %, which is among the highest efficiencies for cesium formamidinium (Cs-FA) lead halide PSCs. Moreover, the unencapsulated devices based on these (Cs-FA) lead halide perovskites show excellent long-term stability; more than 95 % of their initial PCE can be retained after 1440 h storage under ambient conditions. This study may provide an effective strategy to fabricate high-efficiency PSCs with great stability.
Keywords: graded heterojunction; hole transporting materials; interfacial engineering; perovskite solar cells; stability.
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