Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

Ioannis E Fragkos; Volkmar Dierolf; Yasufumi Fujiwara; Nelson Tansu

doi:10.1038/s41598-017-17033-6

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

Sci Rep. 2017 Dec 1;7(1):16773. doi: 10.1038/s41598-017-17033-6.

Authors

Ioannis E Fragkos¹, Volkmar Dierolf², Yasufumi Fujiwara³, Nelson Tansu⁴

Affiliations

¹ Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA. iof213@lehigh.edu.
² Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA.
³ Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan.
⁴ Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA. tansu@lehigh.edu.

Abstract

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu⁺³ ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu⁺³ ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't