Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Ihor Zadorozhnyi; Jing Li; Sergii Pud; Hanna Hlukhova; Volodymyr Handziuk; Yurii Kutovyi; Mykhailo Petrychuk; Svetlana Vitusevich

doi:10.1002/smll.201702516

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Small. 2018 Jan;14(2). doi: 10.1002/smll.201702516. Epub 2017 Nov 22.

Authors

Ihor Zadorozhnyi¹, Jing Li¹, Sergii Pud¹, Hanna Hlukhova¹, Volodymyr Handziuk¹, Yurii Kutovyi¹, Mykhailo Petrychuk², Svetlana Vitusevich¹

Affiliations

¹ Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425, Jülich, Germany.
² Faculty of Radiophysics, Electronics and Computer Systems, Taras Shevchenko National University of Kyiv, 03127, Kyiv, Ukraine.

PMID: 29165876
DOI: 10.1002/smll.201702516

Abstract

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

Keywords: dynamic processes; gamma irradiation; nanowires; single trap.