Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

Yu-Ru Lin; Wan-Ting Tsai; Yung-Chun Wu; Yu-Hsien Lin

doi:10.3390/ma10111276

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

Materials (Basel). 2017 Nov 7;10(11):1276. doi: 10.3390/ma10111276.

Authors

Yu-Ru Lin¹, Wan-Ting Tsai², Yung-Chun Wu³, Yu-Hsien Lin⁴

Affiliations

¹ Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan. flywing79222@gmail.com.
² Department of Electrical Engineering, National United University, Miao-Li 36063, Taiwan. tinayork123@gmail.com.
³ Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan. ycwu@ess.nthu.edu.tw.
⁴ Department of Electrical Engineering, National United University, Miao-Li 36063, Taiwan. yhlin@nuu.edu.tw.

Abstract

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Keywords: junctionless field-effect transistor; nickel silicide; ultra thin body.