Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Ja-Young Seo; Jaeho Choi; Hui-Seon Kim; Jaegyeom Kim; June-Mo Yang; Can Cuhadar; Ji Su Han; Seung-Joo Kim; Donghwa Lee; Ho Won Jang; Nam-Gyu Park

doi:10.1039/c7nr90229h

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Nanoscale. 2017 Nov 9;9(43):17144. doi: 10.1039/c7nr90229h.

Authors

Ja-Young Seo¹, Jaeho Choi, Hui-Seon Kim, Jaegyeom Kim, June-Mo Yang, Can Cuhadar, Ji Su Han, Seung-Joo Kim, Donghwa Lee, Ho Won Jang, Nam-Gyu Park

Affiliation

¹ School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. npark@skku.edu.

PMID: 29077120
DOI: 10.1039/c7nr90229h

Abstract

Correction for 'Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite' by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.

Publication types

Published Erratum