Synthesis of Quantum Dot-ZnS Nanosheet Inorganic Assembly with Low Thermal Fluorescent Quenching for LED Application

Yangyang Xie; Chong Geng; Yiqun Gao; Jay Guoxu Liu; Zi-Hui Zhang; Yonghui Zhang; Shu Xu; Wengang Bi

doi:10.3390/ma10111242

Synthesis of Quantum Dot-ZnS Nanosheet Inorganic Assembly with Low Thermal Fluorescent Quenching for LED Application

Materials (Basel). 2017 Oct 27;10(11):1242. doi: 10.3390/ma10111242.

Authors

Yangyang Xie¹, Chong Geng², Yiqun Gao³, Jay Guoxu Liu⁴, Zi-Hui Zhang⁵, Yonghui Zhang⁶, Shu Xu⁷, Wengang Bi⁸

Affiliations

¹ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. xyyhebut@163.com.
² Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. gengchong@hebut.edu.cn.
³ SHINEON Co., LTD., Building 3, No. 58 Jinghai Road, BDA, Beijing 100176, China. 102996857@163.com.
⁴ SHINEON Co., LTD., Building 3, No. 58 Jinghai Road, BDA, Beijing 100176, China. jayliu@shineon.cn.
⁵ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. zh.zhang@hebut.edu.cn.
⁶ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. zhangyh@hebut.edu.cn.
⁷ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. shu.xu@hebut.edu.cn.
⁸ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China. wbi@hebut.edu.cn.

Abstract

In this report, to tackle the thermal fluorescent quenching issue of II-VI semiconductor quantum dots (QDs), which hinders their on-chip packaging application to light-emitting diodes (LEDs), a QD-ZnS nanosheet inorganic assembly monolith (QD-ZnS NIAM) is developed through chemisorption of QDs on the surface of two-dimensional (2D) ZnS nanosheets and subsequent assembly of the nanosheets into a compact inorganic monolith. The QD-ZnS NIAM could reduce the thermal fluorescent quenching of QDs effectively, possibly due to fewer thermally induced permanent trap states and decreased Förster resonance energy transfer (FRET) among QDs when compared with those in a reference QD composite thin film. We have demonstrated that the QD-ZnS NIAM enables QDs to be directly packaged on-chip in LEDs with over 90% of their initial luminance being retained at above 85 °C, showing advantage in LED application in comparison with conventional QD composite film.

Keywords: assembly; nanosheet; quantum dots; thermal stability.