On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Luping Li; Yonghui Zhang; Shu Xu; Wengang Bi; Zi-Hui Zhang; Hao-Chung Kuo

doi:10.3390/ma10101221

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Materials (Basel). 2017 Oct 24;10(10):1221. doi: 10.3390/ma10101221.

Authors

Luping Li¹, Yonghui Zhang², Shu Xu³, Wengang Bi⁴, Zi-Hui Zhang⁵, Hao-Chung Kuo⁶

Affiliations

¹ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China. liluping1992hebut@hotmail.com.
² Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China. zhangyh@hebut.edu.cn.
³ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China. shu.xu@hebut.edu.cn.
⁴ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China. wbi@hebut.edu.cn.
⁵ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China. zh.zhang@hebut.edu.cn.
⁶ Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan. hckuo@faculty.nctu.edu.tw.

Abstract

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Keywords: III-nitride semiconductor; external quantum efficiency; hole injection efficiency; internal quantum efficiency; light-emitting diode; multiple quantum well.

Publication types

Review