Electrically pumped heterogeneously integrated III-V/SiO2 semiconductor on-chip lasers with different types of etched facet reflectors are designed and fabricated and their lasing performances are characterized and compared. The III-V quantum-well-based epitaxial layers are bonded on silica-on-silicon substrates and fabricated to form Fabry-Perot lasers with dry-etched rear facets. Three types of reflectors are demonstrated, which are etched facets terminated by air, benzocyclobutene, and metal with a thin layer of SiO2 insulator in-between. The laser devices are characterized and compared, including lasing threshold, external quantum efficiency, and output power, and show the impact of different types of etched facet reflectors on lasing performance.