Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

Michael Haas; Viktor Christopoulos; Judith Radebner; Michael Holthausen; Thomas Lainer; Lukas Schuh; Harald Fitzek; Gerald Kothleitner; Ana Torvisco; Roland Fischer; Odo Wunnicke; Harald Stueger

doi:10.1002/anie.201707525

Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

Angew Chem Int Ed Engl. 2017 Nov 6;56(45):14071-14074. doi: 10.1002/anie.201707525. Epub 2017 Oct 4.

Affiliations

¹ Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria.
² Evonik Creavis GmbH, Paul-Baumann-Strasse 1, 45772, Marl, Germany.
³ Institute of Electron Microscopy and Nanoanalysis, Technische Universität Graz, Steyrergasse 17, 8010, Graz, Austria.

PMID: 28977723
DOI: 10.1002/anie.201707525

Abstract

Herein a convenient synthetic method to obtain 2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasilane 4 on a multigram scale is presented. Proton-coupled ²⁹ Si NMR spectroscopy and single-crystal X-ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid-phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a-Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.

Keywords: UV/Vis spectroscopy; oligomerization; silanes; silicon films; thin films.

Publication types

Research Support, Non-U.S. Gov't