Understanding contact gating in Schottky barrier transistors from 2D channels

Abhijith Prakash; Hesameddin Ilatikhameneh; Peng Wu; Joerg Appenzeller

doi:10.1038/s41598-017-12816-3

Understanding contact gating in Schottky barrier transistors from 2D channels

Sci Rep. 2017 Oct 3;7(1):12596. doi: 10.1038/s41598-017-12816-3.

Authors

Abhijith Prakash^{1

2}, Hesameddin Ilatikhameneh^{3

4}, Peng Wu^{3

5}, Joerg Appenzeller^{3

5}

Affiliations

¹ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
² Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA. prakash1@purdue.edu.
³ School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA.
⁴ Network for Computational Nanotechnology, 207 S. Martin Jischke Drive, West Lafayette, 47907, Indiana, USA.
⁵ Birck Nanotechnology Center, Purdue University, West Lafayette, 47907, Indiana, USA.

Abstract

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the "conventional" model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe₂ devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't