Intrinsic Defect Physics in Indium-based Lead-free Halide Double Perovskites

Jian Xu; Jian-Bo Liu; Bai-Xin Liu; Bing Huang

doi:10.1021/acs.jpclett.7b02008

Intrinsic Defect Physics in Indium-based Lead-free Halide Double Perovskites

J Phys Chem Lett. 2017 Sep 21;8(18):4391-4396. doi: 10.1021/acs.jpclett.7b02008. Epub 2017 Sep 1.

Authors

Jian Xu¹, Jian-Bo Liu¹, Bai-Xin Liu¹, Bing Huang²

Affiliations

¹ Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University , Beijing 100084, China.
² Beijing Computational Science Research Center , Beijing 100094, China.

PMID: 28853288
DOI: 10.1021/acs.jpclett.7b02008

Abstract

Lead-free halide double perovskites (HDPs) are expected to be promising photovoltaic (PV) materials beyond organic-inorganic halide perovskite, which is hindered by its structural instability and toxicity. The defect- and stability-related properties of HDPs are critical for the use of HDPs as important PV absorbers, yet their reliability is still unclear. Taking Cs₂AgInBr₆ as a representative, we have systemically investigated the defect properties of HDPs by theoretical calculations. First, we have determined the stable chemical potential regions to grow stoichiometric Cs₂AgInBr₆ without structural decomposition. Second, we reveal that Ag-rich and Br-poor are the ideal chemical potential conditions to grow n-type Cs₂AgInBr₆ with shallow defect levels. Third, we find the conductivity of Cs₂AgInBr₆ can change from good n-type, to poorer n-type, to intrinsic semiconducting depending on the growth conditions. Our studies provided important guidance for experiments to fabricate Pb-free perovskite-based solar cell devices with superior PV performances.