Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

Bin Peng; Dongdong Gong; Wanli Zhang; Jianying Jiang; Lin Shu; Yahui Zhang

doi:10.3390/ma9080686

Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

Materials (Basel). 2016 Aug 10;9(8):686. doi: 10.3390/ma9080686.

Authors

Bin Peng¹, Dongdong Gong², Wanli Zhang³, Jianying Jiang⁴, Lin Shu⁵, Yahui Zhang⁶

Affiliations

¹ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. bpeng@uestc.edu.cn.
² State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. gong90dong12@gmail.com.
³ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. wlzhang@uestc.edu.cn.
⁴ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. jiangjianying19921@gmail.com.
⁵ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. s89s89s@gmail.com.
⁶ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. yahuizhang1990@gmail.com.

Abstract

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y₂O₃/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N₂/Ar flow rate or sputtering pressure, and increases with the further increase of the N₂/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y₂O₃/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film's growth mechanism of the two-step deposition process, preparing highly c-axis-oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective.

Keywords: Hastelloy tapes; aluminum nitride thin films; c-axis orientation; growth mechanism; two-step deposition technique.