Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Shiben Hu; Zhiqiang Fang; Honglong Ning; Ruiqiang Tao; Xianzhe Liu; Yong Zeng; Rihui Yao; Fuxiang Huang; Zhengcao Li; Miao Xu; Lei Wang; Linfeng Lan; Junbiao Peng

doi:10.3390/ma9080623

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Materials (Basel). 2016 Jul 27;9(8):623. doi: 10.3390/ma9080623.

Authors

Shiben Hu¹, Zhiqiang Fang², Honglong Ning³, Ruiqiang Tao⁴, Xianzhe Liu⁵, Yong Zeng⁶, Rihui Yao⁷, Fuxiang Huang⁸, Zhengcao Li⁹, Miao Xu¹⁰, Lei Wang¹¹, Linfeng Lan¹², Junbiao Peng¹³

Affiliations

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. hushiben@foxmail.com.
² Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. fangzq1230@126.com.
³ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. ninghl@scut.edu.cn.
⁴ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. 564717456@qq.com.
⁵ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. 1057000149@qq.com.
⁶ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. 15360452751@163.com.
⁷ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. yaorihui@scut.edu.cn.
⁸ School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, China. hfx@cqut.edu.cn.
⁹ State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084, China. zcli@tsinghua.edu.cn.
¹⁰ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. xumiao4049@126.com.
¹¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. mslwang@scut.edu.cn.
¹² Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. lanlinfeng@scut.edu.cn.
¹³ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China. psjbpeng@scut.edu.cn.

Abstract

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.

Keywords: Cu-Cr; TFTs; a-IGZO; electrodes; interfaces; semiconductors.