Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

Materials (Basel). 2017 Jun 15;10(6):655. doi: 10.3390/ma10060655.

Abstract

SiBCN ceramics were introduced into porous Si₃N₄ ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N₂ atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si₃N₄ and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si₃N₄. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

Keywords: chemical vapor deposition and infiltration; dielectric properties; electromagnetic wave absorbing properties; heat treatment; siliconboron carbonitride ceramic.