Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

Li Xie; Mengzhou Liao; Shuopei Wang; Hua Yu; Luojun Du; Jian Tang; Jing Zhao; Jing Zhang; Peng Chen; Xiaobo Lu; Guole Wang; Guibai Xie; Rong Yang; Dongxia Shi; Guangyu Zhang

doi:10.1002/adma.201702522

Graphene-Contacted Ultrashort Channel Monolayer MoS₂ Transistors

Adv Mater. 2017 Oct;29(37). doi: 10.1002/adma.201702522. Epub 2017 Jul 28.

Authors

Li Xie^{1

2}, Mengzhou Liao^{1

2}, Shuopei Wang^{1

2}, Hua Yu^{1

2}, Luojun Du¹, Jian Tang^{1

2}, Jing Zhao³, Jing Zhang⁴, Peng Chen^{1

2}, Xiaobo Lu^{1

2}, Guole Wang^{1

2}, Guibai Xie⁵, Rong Yang^{1

2

6}, Dongxia Shi^{1

2

6}, Guangyu Zhang^{1

2

6

7}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
² School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China.
³ Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, China.
⁴ Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
⁵ National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi'an), Xi'an, 710100, China.
⁶ Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
⁷ Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.

PMID: 28752671
DOI: 10.1002/adma.201702522

Abstract

2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS₂ . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS₂ FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.

Keywords: MoS2; graphene contacts; short-channel effects; ultrashort channels.