Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption

Shiu-Ming Huang; Shih-Jhe Huang; Ching Hsu; Paritosh V Wadekar; You-Jhih Yan; Shih-Hsun Yu; Mitch Chou

doi:10.1038/s41598-017-05369-y

Enhancement of carrier transport characteristic in the Sb₂Se₂Te topological insulators by N₂ adsorption

Sci Rep. 2017 Jul 11;7(1):5133. doi: 10.1038/s41598-017-05369-y.

Authors

Shiu-Ming Huang¹, Shih-Jhe Huang², Ching Hsu², Paritosh V Wadekar², You-Jhih Yan³, Shih-Hsun Yu³, Mitch Chou^{3

4}

Affiliations

¹ Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan. smhuang@mail.nsysu.edu.tw.
² Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
³ Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
⁴ Taiwan Consortium of Emergent Crystalline Materials, TCECM, Taipei, Taiwan.

Abstract

The carrier transport characteristics of Sb₂Se₂Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb₂Se₂Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N₂ molecular.

Publication types

Research Support, Non-U.S. Gov't