Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution

Roumen Zlatev; Margarita Stoytcheva; Benjamin Valdez; Rojelio Ramos

doi:10.1016/j.talanta.2017.04.055

Rapid reagent-less on-line H₂O₂ quantification in alkaline semiconductor etching solution

Talanta. 2017 Aug 15:171:39-44. doi: 10.1016/j.talanta.2017.04.055. Epub 2017 Apr 26.

Authors

Roumen Zlatev¹, Margarita Stoytcheva², Benjamin Valdez², Rojelio Ramos²

Affiliations

¹ Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. B. Juárez s/n, 21280 Mexicali, B.C., México. Electronic address: roumen@uabc.edu.mx.
² Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. B. Juárez s/n, 21280 Mexicali, B.C., México.

PMID: 28551151
DOI: 10.1016/j.talanta.2017.04.055

Abstract

A simple, rapid, and reagent-less calorimetric method for H₂O₂ quantification, applicable automatically on-line was developed, analytically characterized and tested with real SC-1 alkaline etching solutions used in the semiconductor technology. Being based on H₂O₂ catalytic decomposition by immobilized solid catalyst, the proposed method possesses excellent specificity toward the H₂O₂ without any interference. The total quantification time was found to be less than 60s, RSD lies in the range from 4.7% to 1.8% for the linear concentration range from 2.8 10^-2 to 2molL^-1 respectively and the LOD was determined to be as low as 9.3 10^-3molL^-1.

Keywords: Calorimetry; Hydrogen peroxide quantification; Semiconductors etching solutions.