Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS2/Si Junctions

Chang Hu; Xianjie Wang; Peng Miao; Lingli Zhang; Bingqian Song; Weilong Liu; Zhe Lv; Yu Zhang; Yu Sui; Jinke Tang; Yanqiang Yang; Bo Song; Ping Xu

doi:10.1021/acsami.7b04298

Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS₂/Si Junctions

ACS Appl Mater Interfaces. 2017 May 31;9(21):18362-18368. doi: 10.1021/acsami.7b04298. Epub 2017 May 16.

Authors

Chang Hu¹, Xianjie Wang¹, Peng Miao², Lingli Zhang¹, Bingqian Song¹, Weilong Liu¹, Zhe Lv¹, Yu Zhang¹, Yu Sui¹, Jinke Tang³, Yanqiang Yang⁴, Bo Song^{1

5}, Ping Xu²

Affiliations

¹ Department of Physics, Harbin Institute of Technology , Harbin 150001, China.
² School of Chemistry and Chemical Engineering, Harbin Institute of Technology , Harbin 150001, China.
³ Department of Physics and Astronomy, University of Wyoming , Laramie, Wyoming 82071, United States.
⁴ National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics , Mianyang 621900, China.
⁵ Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology , Harbin 150001, China.

PMID: 28485569
DOI: 10.1021/acsami.7b04298

Abstract

The lateral photovoltaic (LPV) effect has attracted much attention for a long time because of its application in position-sensitive detectors (PSD). Here, we report the ultrafast response of the LPV in amorphous MoS₂/Si (a-MoS₂/Si) junctions prepared by the pulsed laser deposition (PLD) technique. Different orientations of the built-in field and the breakover voltages are observed for a-MoS₂ films deposited on p- and n-type Si wafers, resulting in the induction of positive and negative voltages in the a-MoS₂/n-Si and a-MoS₂/p-Si junctions upon laser illumination, respectively. The dependence of the LPV on the position of the illumination shows very high sensitivity (183 mV mm^-1) and good linearity. The optical relaxation time of LPV with a positive voltage was about 5.8 μs in a-MoS₂/n-Si junction, whereas the optical relaxation time of LPV with a negative voltage was about 2.1 μs in a-MoS₂/p-Si junction. Our results clearly suggested that the inversion layer at the a-MoS₂/Si interface made a good contribution to the ultrafast response of the LPV in a-MoS₂/Si junctions. The large positional sensitivity and ultrafast relaxation of LPV may promise the a-MoS₂/Si junction's applications in fast position-sensitive detectors.

Keywords: amorphous MoS2/Si junctions; inversion layer; lateral photovoltaic (LPV); position-sensitive detectors; pulsed laser deposition (PLD); ultrafast relaxation.