Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film

Yuxi Yang; Guoliang Yuan; Zhibo Yan; Yaojin Wang; Xubing Lu; Jun-Ming Liu

doi:10.1002/adma.201700425

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi_0.95 Co_0.05 O₃ Film

Adv Mater. 2017 Jul;29(26). doi: 10.1002/adma.201700425. Epub 2017 Apr 27.

Authors

Yuxi Yang¹, Guoliang Yuan¹, Zhibo Yan², Yaojin Wang¹, Xubing Lu³, Jun-Ming Liu²

Affiliations

¹ School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China.
² National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
³ Institute for Advanced Materials and Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.

PMID: 28449391
DOI: 10.1002/adma.201700425

Abstract

Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi_0.95 Co_0.05 O₃ (BTCO) film with a SrRuO₃ (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.

Keywords: flexible; inorganic; resistive random access memory; semitransparent.