Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

B B Wu; H M Zheng; Y Q Ding; W J Liu; H L Lu; P Zhou; L Chen; Q Q Sun; S J Ding; David W Zhang

doi:10.1186/s11671-017-2016-x

Direct Growth of Al₂O₃ on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Res Lett. 2017 Dec;12(1):282. doi: 10.1186/s11671-017-2016-x. Epub 2017 Apr 20.

Authors

B B Wu^{1

2}, H M Zheng², Y Q Ding³, W J Liu⁴, H L Lu², P Zhou², L Chen², Q Q Sun², S J Ding², David W Zhang²

Affiliations

¹ The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, 214122, Jiangsu, China.
² State Key Lab ASIC & Syst., Department Microelectronics, Fudan University, Shanghai, 201203, China.
³ The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, 214122, Jiangsu, China. yding@jiangnan.edu.cn.
⁴ State Key Lab ASIC & Syst., Department Microelectronics, Fudan University, Shanghai, 201203, China. wjliu@fudan.edu.cn.

Abstract

Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O₂ or H₂O in ambient. In this work, we have directly grown Al₂O₃ on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al₂O₃ film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It was also found there is an interfacial layer of PO _x in between amorphous Al₂O₃ film and crystallized BP, which is verified by both X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) measurements. By increasing temperature, the PO _x can be converted into fully oxidized P₂O₅.

Keywords: Al2O3; Black phosphorus; Oxygen plasma; Plasma-enhanced atomic layer deposition.