Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

Fuliang Wang; Zhipeng Zhao; Nantian Nie; Feng Wang; Wenhui Zhu

doi:10.1038/srep46639

Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

Sci Rep. 2017 Apr 19:7:46639. doi: 10.1038/srep46639.

Authors

Fuliang Wang^{1

2}, Zhipeng Zhao^{1

2}, Nantian Nie^{1

2}, Feng Wang^{1

2}, Wenhui Zhu^{1

2}

Affiliations

¹ State Key Laboratory of High Performance Complex Manufacturing, Changsha 410083, China.
² School of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.

Abstract

This work demonstrates the dynamic through-silicon-via (TSV) filling process through staged electrodeposition experiments at different current densities. Different morphologies corresponding to TSV filling results can be obtained by controlling the applied current density. Specifically, a low current density (4 mA/cm²) induces seam defect filling, a medium current density (7 mA/cm²) induces defect-free filling, and a high current density (10 mA/cm²) induces void defect filling. Analysis of the filling coefficient indicates that the effect of current density on the TSV filling models is triggered by the coupling effect of consumption and diffusion of additives and copper ions. Further, the morphological evolution of plating reveals that the local deposition rate is affected by the geometrical characteristics of the plating.

Publication types

Research Support, Non-U.S. Gov't