Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Nano Lett. 2017 May 10;17(5):3035-3039. doi: 10.1021/acs.nanolett.7b00365. Epub 2017 Apr 20.

Abstract

Ultrathin freestanding bismuth film is theoretically predicted to be one kind of two-dimensional topological insulators. Experimentally, the topological nature of bismuth strongly depends on the situations of the Bi films. Film thickness and interaction with the substrate often change the topological properties of Bi films. Using angle-resolved photoemission spectroscopy, scanning tunneling microscopy or spectroscopy and first-principle calculation, the properties of Bi(111) ultrathin film grown on the NbSe2 superconducting substrate have been studied. We find the band structures of the ultrathin film is quasi-freestanding, and one-dimensional edge state exists on Bi(111) film as thin as three bilayers. Superconductivity is also detected on different layers of the film and the pairing potential exhibits an exponential decay with the layer thicknesses. Thus, the topological edge state can coexist with superconductivity, which makes the system a promising platform for exploring Majorana Fermions.

Keywords: 2D topological insulator; Ultrathin Bi(111); coexistence; proximity-induced superconductivity; topological edge state.

Publication types

  • Research Support, Non-U.S. Gov't