Low-Temperature Atomic Layer Deposition of MoS2 Films

Titel Jurca; Michael J Moody; Alex Henning; Jonathan D Emery; Binghao Wang; Jeffrey M Tan; Tracy L Lohr; Lincoln J Lauhon; Tobin J Marks

doi:10.1002/anie.201611838

Low-Temperature Atomic Layer Deposition of MoS₂ Films

Angew Chem Int Ed Engl. 2017 Apr 24;56(18):4991-4995. doi: 10.1002/anie.201611838. Epub 2017 Apr 3.

Authors

Titel Jurca¹, Michael J Moody², Alex Henning², Jonathan D Emery², Binghao Wang¹, Jeffrey M Tan¹, Tracy L Lohr¹, Lincoln J Lauhon², Tobin J Marks¹

Affiliations

¹ Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
² Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, 2220 Campus Dr., Evanston, IL, 60208, USA.

PMID: 28371057
DOI: 10.1002/anie.201611838

Abstract

Wet chemical screening reveals the very high reactivity of Mo(NMe₂ )₄ with H₂ S for the low-temperature synthesis of MoS₂ . This observation motivated an investigation of Mo(NMe₂ )₄ as a volatile precursor for the atomic layer deposition (ALD) of MoS₂ thin films. Herein we report that Mo(NMe₂ )₄ enables MoS₂ film growth at record low temperatures-as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

Keywords: atomic layer deposition; low-temperature film growth; metal-organic precursors; molybdenum disulfide.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.