Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

Huijin Li; Dedong Han; Liqiao Liu; Junchen Dong; Guodong Cui; Shengdong Zhang; Xing Zhang; Yi Wang

doi:10.1186/s11671-017-1999-7

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

Nanoscale Res Lett. 2017 Dec;12(1):223. doi: 10.1186/s11671-017-1999-7. Epub 2017 Mar 24.

Authors

Huijin Li¹, Dedong Han², Liqiao Liu¹, Junchen Dong¹, Guodong Cui¹, Shengdong Zhang³, Xing Zhang¹, Yi Wang¹

Affiliations

¹ Institute of Microelectronics, Peking University, 100871, Beijing, China.
² Institute of Microelectronics, Peking University, 100871, Beijing, China. handedong@pku.edu.cn.
³ Shenzhen Graduate School, Peking University, 518055, Shenzhen, China.

Abstract

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O₂ at 300 °C exhibit a low leakage current of 2.5 × 10^-13A, I _on/I _off ratio of 1.4 × 10⁷, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

Keywords: ALD; AZO; Bi-layer channel; Thin-film transistor; ZnO.