A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

Yu Su; Yoshihiro Tsujimoto; Akira Miura; Shinichiro Asai; Maxim Avdeev; Hiraku Ogino; Miho Ako; Alexei A Belik; Takatsugu Masuda; Tetsuo Uchikoshi; Kazunari Yamaura

doi:10.1039/c7cc01011g

A layered wide-gap oxyhalide semiconductor with an infinite ZnO₂ square planar sheet: Sr₂ZnO₂Cl₂

Chem Commun (Camb). 2017 Mar 30;53(27):3826-3829. doi: 10.1039/c7cc01011g.

Authors

Affiliations

¹ Research Centre for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. SU.Yu@nims.go.jp TSUJIMOTO.Yoshihiro@nims.go.jp and Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-0808, Japan.
² Research Centre for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. SU.Yu@nims.go.jp TSUJIMOTO.Yoshihiro@nims.go.jp.
³ Faculty of Engineering, Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-0808, Japan.
⁴ Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
⁵ Bragg Institute, Australian Nuclear Science and Technology Organization, Lucas Heights, New South Wales 2234, Australia.
⁶ National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
⁷ Division of Molecular Science, Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515, Japan.

PMID: 28322390
DOI: 10.1039/c7cc01011g

Abstract

A new square-planar zinc oxyhalide, Sr₂ZnO₂Cl₂, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3d_x²-y² and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO.