Composite CuFe1-xSnxO2/p-type silicon photodiodes

Abdullah G Al-Sehemi; K Mensah-Darkwa; Ahmed A Al-Ghamdi; M Soylu; R K Gupta; F Yakuphanoglu

doi:10.1016/j.saa.2017.03.004

Composite CuFe_1-xSn_xO₂/p-type silicon photodiodes

Spectrochim Acta A Mol Biomol Spectrosc. 2017 Jun 5:180:110-118. doi: 10.1016/j.saa.2017.03.004. Epub 2017 Mar 6.

Authors

Abdullah G Al-Sehemi¹, K Mensah-Darkwa², Ahmed A Al-Ghamdi³, M Soylu⁴, R K Gupta⁵, F Yakuphanoglu⁶

Affiliations

¹ Department of Chemistry, Faculty of Science, King Khalid University, Abha 61413, P.O. Box 9004, Saudi Arabia; Research Center for Advanced Materials Science, King Khalid University, Abha 61413, P.O. Box 9004, Saudi Arabia; Unit of Science and Technology, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia.
² Department of Materials Engineering, College of Engineering, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana.
³ Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia.
⁴ Department of Physics, Faculty of Sciences and Arts, Bingol University, Bingol, Turkey. Electronic address: msoylu@bingol.edu.tr.
⁵ Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762, USA.
⁶ Department of Physics, Faculty of Science, Fırat University, Elazığ, Turkey.

PMID: 28284156
DOI: 10.1016/j.saa.2017.03.004

Abstract

CuFe_1-xSn_xO₂ composite thin film/p-type silicon diodes were prepared on substrate by sol-gel method (x=0.00, 0.01, 0.03, 0.05, 0.07). The structure of CuFe_1-xSn_xO₂ composite thin films was studied using XRD analysis and films exhibited amorphous behavior. The elemental compositions and surface morphology of the films were characterized using SEM and EDX. EDX results confirmed the presence of the compositional elements. The optical band gap of CuFe_1-xSn_xO₂ composite thin films was determined using the optic spectra. The optical band gaps of the CuFe_1-xSn_xO₂ composite thin films were calculated using optical data and were found to be 3.75, 3.78, 3.80, 3.85 and 3.83eV for x=0.00, 0.01, 0.03, 0.05 and 0.07, respectively. The photoresponse and electrical properties of the Al/CuFe_1-xSn_xO₂/p-Si/Al diode were studied. The barrier height and ideality factor were determined to be averagely 0.67eV and 2.6, respectively. The electrical and photoresponse characteristics of the diodes have been investigated under dark and solar light illuminations, respectively. The interface states were used to explain the results obtained in present study. CuFe_1-xSn_xO₂ photodiodes exhibited a high photoresponsivity to be used in optoelectronic applications.

Keywords: Composites; Heterojunction; Light-sensing.